shantou huashan electronic devices co.,ltd . applications high dc current gain absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv ceo(sus) collector-emitter sustaining voltage -100 v i c =-30ma, i b =0 i ceo collector cutoff current -2 ma v ce =-50v, i b =0 i cbo collector cutoff current -1 ma v cb =-100v, i e =0 i ebo emitter-base cutoff current -2 ma v eb =-5v, i c =0 h fe 1 dc current gain 1000 v ce =-4v, i c =-5a h fe 2 500 v ce =-4v, i c =-10a v ce(sat1) collector- emitter saturation voltage -2 v i c =-5a, i b =-10ma v ce(sat2) -3 v i c =-10a, i b =-40ma v be(sat) base- emitter saturation voltage -3.5 v i c =-10a, i b =-40ma v be(on) base- emitter on voltage -3 v v ce =-4v,i c =-10a, t d deiay time 0.15 us t r rise time 0.55 us t s storage time 2.5 us t f fall time 2.5 us vcc=-30v,ic=-5a i b1 =-20ma i b2 =20ma pnp darlington transistor t stg storage temperature - 55~150 t j junction temperature 150 p c collector dissipation t c =25 80w v cbo collector-base voltage -100v v ceo collector-emitter voltage -100v v ebo emitter-base voltage -5v i c collector current dc -10a i b base current -0.5a HP147T 1 D base b 2 D collector c 3 D emitter, e to-220 www..net
shantou huashan electronic devices co.,ltd . pnp darlington transistor HP147T www..net
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